New range of low-frequency GaN transistors from RFHIC.
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High efficiency and reliable performance with the new range of low-frequency GaN transistors from RFHIC.
In industrial, scientific, and medical RF systems, the choice of transistors is key. They ensure efficiency, stability, and reliability. Next-generation designs require components capable of operating at high power. Furthermore, they must offer thermal stability, consistent performance, and high power density. This is especially critical in particle accelerators, fusion systems, and medical diagnostic equipment.
Allow me to introduce RFHIC’s new line of low-frequency GaN transistors. Designed to operate across a wide range from 27 to 300 MHz, this family represents a high-performance alternative to traditional LDMOS technology. It offers significant improvements in efficiency, power density, and structural reliability, all in a compact, robust format.
Key features
RFHIC’s GaN transistors combine the efficiency of GaN technology with stable, high-power, broadband performance.
- Wide frequency range: it covers from 27 up to 300 MHz, ensuring stable operation in broadband applications.
- Variety of models: references are adapted to specific power and frequency needs, with a VSWR >10:1 and P3dB between 1,500W and 1,700W.
- High power density: delivers up to 1,700W in specific models.
- Thermal and structural stability: operates reliably even under demanding conditions. Reduces the risk of overheating and failures.
- High efficiency: more than 80% across the entire range. This enables energy-efficient RF systems.
The combination of efficiency, power, and reliability makes these transistors the ideal solution for advanced RF systems. They allow for continuous, stable operation while ensuring minimal energy dissipation and low maintenance.
Applications
RFHIC’s line of GaN transistors is integrated into multiple critical sectors and applications:
- Particle accelerators: robust RF sources for advanced research facilities.
- Plasma processing in semiconductors: stable and efficient RF power delivery for the manufacturing of materials and chips.
- Plasma fusion systems: reliable RF power supply for next-generation energy research projects.
- Inductive power transfer: high-efficiency RF solutions for wireless energy transmission.
- Medical imaging (MRI): precise and powerful performance for advanced diagnostic equipment.
- Aerospace and defense: powering satellite ground stations, early warning radars, surveillance systems, and electronic warfare.
With this expanded lineup, RFHIC solidifies its leadership in GaN technology. The combination of efficiency, power, and robustness allows for the design of advanced systems without compromising on space, reliability, or energy consumption.
